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STATIC AND DYNAMIC CHARACTERISTICS OF IGBT AND MOSFET manufacturer in india

MODAL NO: MT-E479

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SCOPE OF LEARNING: 

Study of V-I Characteristics of IGBT

Study of V-I Characteristics of MOSFET

Study of Gate Drive Characteristics of IGBT

Study of Gate Drive Characteristics of MOSFET

SCOPE OF LEARNING: 

Study of V-I Characteristics of IGBT

Study of V-I Characteristics of MOSFET

Study of Gate Drive Characteristics of IGBT

Study of Gate Drive Characteristics of MOSFET

SALIENT FEATURES:

Protection Cover

Front panel built with high class insulated Printed Circuit Board sheet with well printed circuits and      symbols.

Fuse for Short Circuit protection 

Instruction manual.

Connections are brought out through 2mm Colored Sockets.

Patch Cords 2mm.

The trainer is housed in ABS Plastic cabinet.

Size of the trainer set 12”x8” 

OPTIONAL ACCESSORIES:

Multimeter

TECHNICAL SPECIFICATIONS: 

Digital Meters:

Voltmeter 20VDC.

Ammeter 200mA DC.

Voltmeter 200V DC.

Power Supplies:

DC Supply IC Regulated 0-10V DC, 150mA.

DC Supply IC Regulated 0-30V DC, 150mA.

Operated on Mains power 230V, 50Hz +10%

Components are mounted on the panels are:

IGBT 25N120 (2Nos.).

MOSFET 1RF540 (2Nos.)

Voltage Control through Potentiometer.

PWM Pulse Generator Circuit.

Frequency Control Through Potentiometer

PWM Control Through Potentiometer

Resistors for Load

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