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DYNAMIC CHARACTERISTICS OF IGBT AND MOSFET manufacturer in india

MODAL NO: MT-E479B

QTY


SCOPE OF LEARNING: 

Study of Gate Drive Characteristics of IGBT

Study of Gate Drive Characteristics of MOSFET

Study of Gate Drive Characteristics of Power Transistor

SCOPE OF LEARNING: 

Study of Gate Drive Characteristics of IGBT

Study of Gate Drive Characteristics of MOSFET

Study of Gate Drive Characteristics of Power Transistor

SALIENT FEATURES:

Protection Cover

Front panel built with high class insulated Printed Circuit Board sheet with well printed circuits and      symbols.

Fuse for Short Circuit protection 

Instruction manual.

Connections are brought out through 2mm Colored Sockets.

Patch Cords 2mm.

The trainer is housed in ABS Plastic cabinet.

Size of the trainer set 12”x8” 

OPTIONAL ACCESSORIES:

Multimeter


TECHNICAL SPECIFICATIONS: 

Power Supplies:

Operated on Mains power 230V, 50Hz +10%

Rectified DC 24V

Components are mounted on the panels are:

IGBT 25N120 (2Nos.).

MOSFET 1RF540 (2Nos.)

Power Transistor 2N3055 (2Nos.)

PWM Pulse Generator Circuit.

Frequency Control Through Potentiometer

PWM Control Through Potentiometer

Resistors for Load

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