Energy Band Gap of PN Junction Diode (Oven)
Energy Band Gap of PN Junction Diode (Oven) - Product Image

Energy Band Gap of PN Junction Diode (Oven)

Model Number: MT-E076B

Energy Band Gap of PN Junction Diode, PN Junction Diode Trainer, Energy Band Gap Apparatus, Semiconductor Physics Equipment

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Product Specification

The Energy Band Gap of PN Junction Diode (Oven) is a high-precision laboratory instrument developed for determining the energy band gap of a PN junction diode by studying the variation of reverse saturation current with temperature. Manufactured by Micro Technologies, the apparatus enables students to understand fundamental semiconductor properties through practical experimentation.

Designed for engineering colleges, universities, polytechnic institutes, and physics laboratories, the trainer combines a regulated DC power supply, digital measuring instruments, and a temperature-controlled oven to provide reliable and accurate experimental results.

The apparatus incorporates a regulated 0–6V DC power supply for supplying stable voltage to the diode circuit. Built-in digital voltmeter and digital ammeter allow accurate monitoring of voltage and current during the experiment.

A 1N60 semiconductor diode is mounted inside a specially designed temperature-controlled oven, allowing the diode temperature to be varied up to 200°C. The oven temperature is monitored using an integrated thermometer, while the applied voltage is adjusted through a precision potentiometer.

The trainer is manufactured using a high-quality insulated printed circuit board with clearly printed symbols and circuit diagrams. All experiment points are brought out through connection terminals, and the complete system is housed in a rugged metal cabinet for reliable laboratory performance and long service life.


Scope of Learning

  • Determination of Energy Band Gap of PN Junction Diode
  • Semiconductor Characteristics
  • Temperature Dependence of Reverse Saturation Current
  • Semiconductor Physics Experiments
  • Temperature-Controlled Measurements
  • Practical Electronics Laboratory Techniques

Features

  • Digital voltmeter and ammeter
  • Regulated DC power supply
  • Temperature-controlled oven
  • Built-in thermometer
  • Precision voltage control
  • 1N60 diode mounted inside oven
  • High-quality insulated PCB
  • Clearly printed circuit layout
  • Rugged metal cabinet
  • Laboratory-grade construction
  • Compact design
  • Long operational life

Benefits

  • Accurate semiconductor experiments
  • Stable temperature-controlled measurements
  • Precise digital readings
  • Easy operation
  • Reliable laboratory performance
  • Suitable for engineering education
  • Safe experimental setup
  • Durable construction
  • Low maintenance
  • Long service life
  • Cost-effective laboratory solution
  • Ideal for semiconductor studies

Technical Specifications

Specification Details
Product Name Energy Band Gap of PN Junction Diode (Oven)
Experiment Determination of Energy Band Gap of PN Junction Diode
Ammeter Digital 200µA DC
Voltmeter Digital 6V DC
Power Supply Regulated 0–6V DC, 150mA
Input Supply 230V AC, 50Hz ±10%
Semiconductor Device 1N60 Diode
Temperature Control Oven up to 200°C
Temperature Measurement Built-in Thermometer
Voltage Control Precision Potentiometer
Cabinet Metal Cabinet
Approximate Size 13" × 6"

Items Supplied

  • Energy Band Gap of PN Junction Diode (Oven)
  • Temperature-Controlled Oven Unit
  • Instruction Manual

Optional Accessories

  • Digital Multimeter

Applications

  • Semiconductor Physics Laboratories
  • Engineering Physics Laboratories
  • Electronics Engineering Colleges
  • Universities
  • Polytechnic Institutes
  • Technical Training Centres
  • Research Laboratories
  • Educational Demonstrations
  • Student Practical Experiments
  • Semiconductor Device Studies

SKU System

MT-EBG-001


FAQs

What is the Energy Band Gap of PN Junction Diode (Oven) used for?

It is used to determine the energy band gap of a PN junction diode by studying the variation of reverse saturation current with temperature.

Which measuring instruments are included?

The apparatus includes:

  • Digital 200µA DC Ammeter
  • Digital 6V DC Voltmeter
  • Built-in Thermometer

What semiconductor device is provided?

The apparatus uses a 1N60 PN Junction Diode mounted inside the temperature-controlled oven.

What is the maximum oven temperature?

The oven can be heated up to 200°C for performing energy band gap experiments.

How is the applied voltage controlled?

The applied voltage is adjusted using an onboard precision potentiometer.

Is the apparatus suitable for engineering laboratories?

Yes. It is ideal for engineering colleges, universities, polytechnic institutes, technical training centres, and semiconductor physics laboratories.

Can the Energy Band Gap of PN Junction Diode (Oven) be supplied in bulk?

Yes. Micro Technologies supplies Energy Band Gap of PN Junction Diode (Oven) apparatus to educational institutions, government organisations, research laboratories, OEM projects, distributors, and bulk procurement.


Why Choose Our Products

  • Laboratory-grade semiconductor experiment setup
  • Accurate digital measurement system
  • Stable temperature-controlled oven
  • High-quality PCB construction
  • Rugged metal cabinet
  • Reliable laboratory performance
  • OEM and institutional supply available
  • Competitive B2B pricing
  • Technical support
  • Excellent after-sales service
  • Long operational life
  • Trusted laboratory equipment manufacturer

Call to Action

Perform accurate semiconductor and energy band gap experiments with the Energy Band Gap of PN Junction Diode (Oven) from Micro Technologies. Contact us today for pricing, institutional procurement, OEM manufacturing, government tenders, distributor opportunities, and bulk order quotations.

+91-9416155221 +91-9896055098