Energy Band Gap of PN Junction Diode and Diffusion Potential

The Energy Band Gap of PN Junction Diode and Diffusion Potential apparatus is a comprehensive laboratory trainer developed for studying the electrical and thermal characteristics of PN junction diodes. Manufactured by Micro Technologies, the apparatus enables students to investigate important semiconductor parameters including energy band gap, diffusion potential, reverse saturation current, temperature coefficient of junction voltage, and junction capacitance.

Designed for engineering colleges, universities, polytechnic institutes, and semiconductor laboratories, the trainer integrates digital measuring instruments, a temperature-controlled oven, and regulated DC power supplies into a compact laboratory setup.

The apparatus features a regulated 0–6V DC power supply for precise voltage control and incorporates digital voltmeters and a digital microammeter for accurate measurement of voltage and current during experimentation.

A 1N60 PN junction diode is mounted inside a temperature-controlled oven capable of reaching temperatures up to 200°C. The oven allows controlled heating of the semiconductor device while the integrated thermometer continuously monitors the temperature. The applied voltage is adjusted smoothly using a precision potentiometer, enabling detailed observation of semiconductor characteristics over a wide temperature range.

Constructed using a high-quality insulated printed circuit board with clearly printed circuit symbols, the trainer is housed in a rugged metal cabinet for dependable laboratory use. All experimental terminals are brought out through durable connection terminals, ensuring safe and convenient operation.

Scope of Learning

• Study of Reverse Saturation Current (I₀)
• Determination of Material Constant
• Temperature Coefficient of Junction Voltage (dV/dT)
• Determination of Energy Band Gap (Vg₀)
• Study of Junction Capacitance
• Diffusion Potential of PN Junction Diode
• Temperature Characteristics of Semiconductor Devices
• Practical Semiconductor Physics Experiments

Features

• Digital voltmeters and microammeter
• Regulated DC power supply
• Temperature-controlled oven
• Built-in thermometer
• Precision voltage control
• 1N60 PN junction diode
• High-quality insulated PCB
• Clearly printed circuit layout
• Rugged metal cabinet
• Laboratory-grade construction
• Compact design
• Long operational life

Benefits

• Accurate semiconductor measurements
• Stable temperature-controlled experiments
• Precise digital readings
• Easy observation of diode characteristics
• Reliable laboratory performance
• Suitable for engineering education
• Safe experimental arrangement
• Durable construction
• Low maintenance
• Long service life
• Cost-effective laboratory solution
• Ideal for semiconductor device studies

Technical Specifications

Items Supplied

• Energy Band Gap of PN Junction Diode and Diffusion Potential Apparatus
• Temperature-Controlled Oven Unit
• Instruction Manual

Optional Accessories

• Digital Multimeter

Applications

• Semiconductor Physics Laboratories
• Electronics Engineering Laboratories
• Engineering Colleges
• Universities
• Polytechnic Institutes
• Technical Training Centres
• Research Laboratories
• Educational Demonstrations
• Student Practical Experiments
• Semiconductor Device Analysis

SKU System

MT-EBGDP-001

FAQs

What is the Energy Band Gap of PN Junction Diode and Diffusion Potential Apparatus used for?

It is used to study the energy band gap, diffusion potential, reverse saturation current, junction capacitance, and temperature characteristics of a PN junction diode.

Which semiconductor device is provided?

The apparatus uses a 1N60 PN Junction Diode mounted inside a temperature-controlled oven.

Which measuring instruments are included?

The apparatus includes:

• Digital 200µA DC Ammeter
• Digital 6V DC Voltmeters
• Built-in Thermometer

What is the maximum oven temperature?

The oven can be heated up to 200°C for temperature-dependent semiconductor experiments.

What experiments can be performed?

The apparatus allows the study of:

• Reverse Saturation Current
• Material Constant
• Junction Voltage Temperature Coefficient
• Energy Band Gap
• Diffusion Potential
• Junction Capacitance

Is the apparatus suitable for engineering laboratories?

Yes. It is ideal for engineering colleges, universities, polytechnic institutes, semiconductor physics laboratories, and research organisations.

Can the Energy Band Gap of PN Junction Diode and Diffusion Potential Apparatus be supplied in bulk?

Yes. Micro Technologies supplies Energy Band Gap of PN Junction Diode and Diffusion Potential Apparatus to educational institutions, government organisations, research laboratories, OEM projects, distributors, and bulk procurement.

Why Choose Our Products

• Comprehensive semiconductor experiment platform
• Accurate digital measurement system
• Stable temperature-controlled oven
• High-quality PCB construction
• Rugged metal cabinet
• Reliable laboratory performance
• OEM and institutional supply available
• Competitive B2B pricing
• Technical support
• Excellent after-sales service
• Long operational life
• Trusted laboratory equipment manufacturer

Call to Action

Perform advanced semiconductor experiments with the Energy Band Gap of PN Junction Diode and Diffusion Potential Apparatus from Micro Technologies. Contact us today for pricing, institutional procurement, OEM manufacturing, government tenders, distributor opportunities, and bulk order quotations.